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| title | chunk | source | category | tags | date_saved | instance |
|---|---|---|---|---|---|---|
| X-ray fluorescence | 2/6 | https://en.wikipedia.org/wiki/X-ray_fluorescence | reference | science, encyclopedia | 2026-05-05T10:06:44.876284+00:00 | kb-cron |
In energy-dispersive analysis, dispersion and detection are a single operation, as already mentioned above. Proportional counters or various types of solid-state detectors (PIN diode, Si(Li), Ge(Li), silicon drift detector SDD) are used. They all share the same detection principle: An incoming X-ray photon ionizes a large number of detector atoms with the amount of charge produced being proportional to the energy of the incoming photon. The charge is then collected and the process repeats itself for the next photon. Detector speed is obviously critical, as all charge carriers measured have to come from the same photon to measure the photon energy correctly (peak length discrimination is used to eliminate events that seem to have been produced by two X-ray photons arriving almost simultaneously). The spectrum is then built up by dividing the energy spectrum into discrete bins and counting the number of pulses registered within each energy bin. EDXRF detector types vary in resolution, speed and the means of cooling (a low number of free charge carriers is critical in the solid state detectors): proportional counters with resolutions of several hundred eV cover the low end of the performance spectrum, followed by PIN diode detectors, while the Si(Li), Ge(Li) and SDDs occupy the high end of the performance scale. In wavelength-dispersive analysis, the single-wavelength radiation produced by the monochromator is passed into a chamber containing a gas that is ionized by the X-ray photons. A central electrode is charged at (typically) +1700 V with respect to the conducting chamber walls, and each photon triggers a pulse-like cascade of current across this field. The signal is amplified and transformed into an accumulating digital count. These counts are then processed to obtain analytical data.
=== X-ray intensity === The fluorescence process is inefficient, and the secondary radiation is much weaker than the primary beam. Furthermore, the secondary radiation from lighter elements is of relatively low energy (long wavelength) and has low penetrating power, and is severely attenuated if the beam passes through air for any distance. Because of this, for high-performance analysis, the path from tube to sample to detector is maintained under vacuum (around 10 Pa residual pressure). This means in practice that most of the working parts of the instrument have to be located in a large vacuum chamber. The problems of maintaining moving parts in vacuum, and of rapidly introducing and withdrawing the sample without losing vacuum, pose major challenges for the design of the instrument. For less demanding applications, or when the sample is damaged by a vacuum (e.g. a volatile sample), a helium-swept X-ray chamber can be substituted, with some loss of low-Z (Z = atomic number) intensities.
== Chemical analysis == The use of a primary X-ray beam to excite fluorescent radiation from the sample was first proposed by Glocker and Schreiber in 1928. Today, the method is used as a non-destructive analytical technique, and as a process control tool in many extractive and processing industries. In principle, the lightest element that can be analysed is beryllium (Z = 4), but due to instrumental limitations and low X-ray yields for the light elements, it is often difficult to quantify elements lighter than sodium (Z = 11), unless background corrections and very comprehensive inter-element corrections are made.
== Energy dispersive spectrometry ==
In energy-dispersive spectrometers (EDX or EDS), the detector allows the determination of the energy of the photon when it is detected. Detectors historically have been based on silicon semiconductors, in the form of lithium-drifted silicon crystals, or high-purity silicon wafers.
=== Si(Li) detectors === These consist essentially of a 3–5 mm thick silicon junction type p-i-n diode (same as PIN diode) with a bias of −1000 V across it. The lithium-drifted centre part forms the non-conducting i-layer, where Li compensates the residual acceptors which would otherwise make the layer p-type. When an X-ray photon passes through, it causes a swarm of electron-hole pairs to form, and this causes a voltage pulse. To obtain sufficiently low conductivity, the detector must be maintained at low temperature, and liquid-nitrogen cooling must be used for the best resolution. With some loss of resolution, the much more convenient Peltier cooling can be employed.
=== Wafer detectors === More recently, high-purity silicon wafers with low conductivity have become routinely available. Cooled by the Peltier effect, this provides a cheap and convenient detector, although the liquid nitrogen cooled Si(Li) detector still has the best resolution (i.e. ability to distinguish different photon energies).
=== Amplifiers === The pulses generated by the detector are processed by pulse-shaping amplifiers. It takes time for the amplifier to shape the pulse for optimum resolution, and there is therefore a trade-off between resolution and count-rate: long processing time for good resolution results in "pulse pile-up" in which the pulses from successive photons overlap. Multi-photon events are, however, typically more drawn out in time (photons did not arrive exactly at the same time) than single photon events and pulse-length discrimination can thus be used to filter most of these out. Even so, a small number of pile-up peaks will remain and pile-up correction should be built into the software in applications that require trace analysis. To make the most efficient use of the detector, the tube current should be reduced to keep multi-photon events (before discrimination) at a reasonable level, e.g. 5–20%. Therefore, managing this trade-off between speed and accuracy is a fundamental consideration in modern XRF instrument design, especially for high-throughput industrial applications.